參數(shù)資料
型號(hào)： S29GL128P90FAI010
廠商： SPANSION LLC
元件分類： PROM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 128M X 1 FLASH 3V PROM, 90 ns, PBGA64
封裝： 13 X 11 MM, 1 MM PITCH, FBGA-64
文件頁數(shù)： 55/77頁
文件大?。?/td> 2121K
代理商： S29GL128P90FAI010
November 8, 2007 S29GL-P_00_A7
S29GL-P MirrorBit
Flash Family
55
D a t a
S h e e t
( P r e l i m i n a r y )
11.6
DC Characteristics
Notes
1. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
2. I
CC
active while Embedded Erase or Embedded Program or Write Buffer Programming is in progress.
3. Not 100% tested.
4. Automatic sleep mode enables the lower power mode when addresses remain stable tor t
ACC
+ 30 ns.
5. V
IO
= 1.65–3.6 V
6. V
CC
= 3 V and V
IO
= 3V or 1.8V. When V
IO
is at 1.8V, I/O pins cannot operate at 3V.
Table 11.2
S29GL-P DC Characteristics (CMOS Compatible)
Parameter
Symbol
Parameter Description
(Notes)
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
(1)
V
IN
= V
SS
to V
CC
V
CC
= V
CC
max
WP/ACC
±2.0
μA
Others
±1.0
I
LIT
I
LO
A9 Input Load Current
V
CC
= V
CC max
; A9 = 12.5 V
V
OUT
= V
SS
to V
CC ,
V
CC
= V
CC max
CE# = V
IL
, OE# = V
IH
, V
CC
= V
CCmax
,
f
=
1 MHz
CE# = V
IL
, OE# = V
IH
, V
CC
= V
CCmax
,
f
=
5 MHz
CE# = V
IL
, OE# = V
IH
, V
CC
= V
CCmax
,
f
=
10 MHz
CE# = V
IL,
OE# = V
IH
CE# = V
IL,
OE# = V
IH,
V
CC
= V
CCmax
,
f
= 10 MHz
CE# = V
IL
, OE# = V
IH
, V
CC
= V
CCmax
,
f
= 33 MHz
35
μA
Output Leakage Current
±1.0
μA
I
CC1
V
CC
Active Read Current
(1)
6
20
mA
30
55
60
110
I
IO2
V
IO
Non-Active Output
0.2
10
mA
I
CC2
V
CC
Intra-Page Read Current
(1)
1
10
mA
5
20
I
CC3
V
CC
Active Erase/
Program Current (
2
,
3
)
CE# = V
IL,
OE# = V
IH,
V
CC
= V
CCmax
50
90
mA
I
CC4
V
CC
Standby Current
CE#, RESET# = V
CC
± 0.3 V,
OE# = V
IH,
V
CC
= V
CCmax
V
IL
= V
SS
+ 0.3 V/-0.1V,
V
CC
= V
CCmax;
V
IL
= V
SS
+ 0.3 V/-0.1V,
RESET# = V
SS
± 0.3 V
V
CC
= V
CCmax
, V
IH
= V
CC
± 0.3 V,
V
IL
= V
SS
+ 0.3 V/-0.1V, WP#/ACC = V
IH
1
5
μA
I
CC5
V
CC
Reset Current
250
500
μA
I
CC6
Automatic Sleep Mode
(4)
1
5
μA
I
ACC
ACC Accelerated
Program Current
CE# = V
IL,
OE# = V
IH,
V
CC
= V
CCmax,
WP#/ACC = V
HH
WP#/ACC
pin
10
20
mA
V
CC
pin
50
80
V
IL
V
IH
V
HH
Input Low Voltage
(5)
–0.1
0.3 x V
IO
V
IO
+ 0.3
12.5
V
Input High Voltage
(5)
0.7 x V
IO
11.5
V
Voltage for Program Acceleration V
CC
= 2.7 –3.6 V
Voltage for Autoselect and
Temporary Sector Unprotect
V
V
ID
V
CC
= 2.7 –3.6 V
11.5
12.5
V
V
OL
V
OH
V
LKO
Output Low Voltage
(5)
I
OL
= 100 μA
I
OH
= -100 μA
0.15 x V
IO
V
Output High Voltage
(5)
0.85 x V
IO
2.3
V
Low V
CC
Lock-Out Voltage
(3)
2.5
V
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