參數(shù)資料
型號(hào)： S29GL128P90FAI010
廠商： SPANSION LLC
元件分類： PROM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 128M X 1 FLASH 3V PROM, 90 ns, PBGA64
封裝： 13 X 11 MM, 1 MM PITCH, FBGA-64
文件頁(yè)數(shù)： 36/77頁(yè)
文件大?。?/td> 2121K
代理商： S29GL128P90FAI010
36
S29GL-P MirrorBit
Flash Family
S29GL-P_00_A7 November 8, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
/* Example: Unlock Bypass Program Command */
/* Do while in Unlock Bypass Entry Mode! */
*( (UINT16 *)base_addr ) = 0x00A0; /* write program setup command */
*( (UINT16 *)pa ) = data; /* write data to be programmed */
/* Poll until done or error. */
/* If done and more to program, */
/* do above two cycles again. */
/* Example: Unlock Bypass Exit Command */
*( (UINT16 *)base_addr ) = 0x0090;
*( (UINT16 *)base_addr ) = 0x0000;
7.8
Write Operation Status
The device provides several bits to determine the status of a program or erase operation. The following
subsections describe the function of DQ1, DQ2, DQ3, DQ5, DQ6, and DQ7.
7.8.1
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm
is in progress or completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising
edge of the final WE# pulse in the command sequence. Note that the Data# Polling is valid only for the last
word being programmed in the write-buffer-page during Write Buffer Programming. Reading Data# Polling
status on any word other than the last word to be programmed in the write-buffer-page returns false status
information.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum
programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the
Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system
must provide the program address to read valid status information on DQ7. If a program address falls within a
protected sector, Data# polling on DQ7 is active, then that sector returns to the read mode.
During the Embedded Erase Algorithm, Data# polling produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the sectors selected for erasure to read valid status
information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling
on DQ7 is active for approximately 100
μs, then the device returns to the read mode. If not all selected
sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the
selected sectors that are protected. However, if the system reads DQ7 at an address within a protected
sector, the status may not be valid.
Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously
with DQ6-DQ0 while Output Enable (OE#) is asserted low. That is, the device may change from providing
status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read
Table 7.15
Unlock Bypass Program
(LLD Function = lld_UnlockBypassProgramCmd)
Cycle
Description
Operation
Word Address
Data
1
Program Setup Command
Write
Base +xxxh
00A0h
2
Program Command
Write
Program Address
Program Data
Table 7.16
Unlock Bypass Reset
(LLD Function = lld_UnlockBypassResetCmd)
Cycle
Description
Operation
Word Address
Data
1
Reset Cycle 1
Write
Base +xxxh
0090h
2
Reset Cycle 2
Write
Base +xxxh
0000h
相關(guān)PDF資料
PDF描述
S3901-1024Q NMOS Linear image sensor
S3901-512F NMOS Linear image sensor
S3901 NMOS Linear image sensor
S3901-128Q NMOS Linear image sensor
S3901-256Q NMOS Linear image sensor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128P90FAIR10 功能描述:閃存 128MB 3.0-3.6V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL128P90FAIR20 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 90NS 64BGA - Trays 制造商:Spansion 功能描述:SPZS29GL128P90FAIR20 IC 128M PAGE-MODE 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 90ns 64-Pin Fortified BGA Tray
S29GL128P90FFCR10 功能描述:閃存 128MB 3.0-3.6V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL128P90FFCR12 功能描述:閃存 128M 3.0V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL128P90FFCR20 功能描述:閃存 128MB 3.0-3.6V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*