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參數(shù)資料
| 型號： | S3901-256Q |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | NMOS Linear image sensor |
| 中文描述： | NMOS管線性圖像傳感器 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 240K |
| 代理商： | S3901-256Q |
NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active
area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. NMOS linear image sensors also offer excellent output
linearity and wide dynamic range.
The photodiodes of S3901 series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 μm. The photodiodes of S3904 series also
have a height of 2.5 mm but are arrayed at a spacing of 25 μm. The photodiodes are available in 3 different pixel quantities for each series: 128
(S3901-128Q), 256 (S3901-256Q, S3904-256Q), 512 (S3901-512Q, S3904-512Q) and 1024 (S3904-1024Q). Quartz glass is the standard window
material.
Features
l
Wide active area
Pixel pitch: 50 μm (S3901 series)
25 μm (S3904 series)
Pixel height: 2.5 mm
l
High UV sensitivity with good stability
l
Low dark current and high saturation charge allow a long
integration time and a wide dynamic range at room temperature
l
Excellent output linearity and sensitivity spatial uniformity
l
Lower power consumption: 1 mW Max.
l
Start pulse and clock pulses are CMOS logic compatible
Applications
l
Multichannel spectrophotometry
l
Image readout system
I M A G E S E N S O R
NMOS linear image sensor
S3901/S3904 series
Current output, high UV sensitivity, excellent linearity, low power consumption
2
1
1
4
OXIDATION SILICON
N TYPE SILICON
P TYPE SILICON
S3901 SERIES: a=50 μm, b=45 μm
S3904 SERIES: a=25 μm, b=20 μm
b
a
KMPDC0020EA
Figure 1 Equivalent circuit
Vss
START
st
CLOCK
CLOCK
1
2
ACTIVE
PHOTODIODE
SATURATION
CONTROL GATE
SATURATION
CONTROL DRAIN
DUMMY DIODE
DUMMY VIDEO
ACTIVE VIDEO
END OF SCAN
DEGITAL SHIFT RESISTER
(MOS SHIFT RESISTER)
Figure 2 Active area structure
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S3901-512Q | NMOS Linear image sensor |
| S4276-02 | Large area Si PIN photodiode for direct detection |
| S4276-03 | Large area Si PIN photodiode for direct detection |
| S5377 | Large area Si PIN photodiode for direct detection |
| S5377-02 | Large area Si PIN photodiode for direct detection |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S3901-512F | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:NMOS linear image sensor |
| S3901-512Q | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:NMOS Linear image sensor |
| S3901BA | 制造商:ELEKTRON TECHNOLOGY CORP 功能描述:Switch, toggle; metal act.; SPST; Mom. |
| S3901-FX | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:NMOS linear image sensor |
| S3902 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption |
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