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| 型號(hào)： | S29GL128P11FFIR10 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 110 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 |
| 文件頁(yè)數(shù)： | 59/77頁(yè) |
| 文件大小： | 2121K |
| 代理商： | S29GL128P11FFIR10 |
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November 8, 2007 S29GL-P_00_A7
S29GL-P MirrorBit
Flash Family
59
D a t a
S h e e t
( P r e l i m i n a r y )
Notes
1. V
IO
< V
CC
+ 200 mV.
2. V
IO
and V
CC
ramp must be synchronized during power up.
3. If RESET# is not stable for t
VCS
or t
VIOS
:
The device does not permit any read and write operations.
A valid read operation returns FFh.
A hardware reset is required.
4. V
CC
maximum power-up current (RST=V
IL
) is 20 mA.
Figure 11.8
Power-up Sequence Timings
Table 11.5
Power-up Sequence Timings
Parameter
Description
Speed
Unit
t
VCS
Reset Low Time from rising edge of V
CC
(or last Reset pulse) to
rising edge of RESET#
Min
35
μs
t
VIOS
Reset Low Time from rising edge of V
IO
(or last Reset pulse) to
rising edge of RESET#
Min
35
μs
t
RH
Reset High Time before Read
Min
200
ns
V
CC
min
V
CC
V
IO
min
V
IO
CE#
RESET#
t
RH
t
VIOS
t
VCS
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