- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359757 > S29GL128P10TAIV10 (SPANSION LLC) 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology PDF資料下載
參數(shù)資料
| 型號： | S29GL128P10TAIV10 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 100 ns, PDSO56 |
| 封裝： | 20 X 14 MM, MO-142EC, TSOP-56 |
| 文件頁數(shù)： | 20/77頁 |
| 文件大?。?/td> | 2121K |
| 代理商： | S29GL128P10TAIV10 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁當(dāng)前第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁
20
S29GL-P MirrorBit
Flash Family
S29GL-P_00_A7 November 8, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
7.2
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the
BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ0-DQ15 are active and controlled by CE#
and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ0-DQ7 are
active and controlled by CE# and OE#. The data I/O pins DQ8-DQ14 are tri-stated, and the DQ15 pin is used
as an input for the LSB (A-1) address function.
7.3
VersatileIO
TM
(V
IO
) Control
The VersatileIO
TM
(V
IO
) control allows the host system to set the voltage levels that the device generates and
tolerates on all inputs and outputs (address, control, and DQ signals). V
IO
range is 1.65 to V
CC
. See
Ordering
Information
on page 9
for V
IO
options on this device.
For example, a V
IO
of 1.65-3.6 volts allows for I/O at the 1.8 or 3 volt levels, driving and receiving signals to
and from other 1.8 or 3 V devices on the same data bus.
7.4
Read
All memories require access time to output array data. In a read operation, data is read from one memory
location at a time. Addresses are presented to the device in random order, and the propagation delay through
the device causes the data on its outputs to arrive with the address on its inputs.
The device defaults to reading array data after device power-up or hardware reset. To read data from the
memory array, the system must first assert a valid address on Amax-A0, while driving OE# and CE# to V
IL
.
WE# must remain at V
IH
. All addresses are latched on the falling edge of CE#. Data will appear on DQ15-
DQ0 after address access time (t
ACC
), which is equal to the delay from stable addresses to valid output data.
The OE# signal must be driven to V
IL
. Data is output on DQ15-DQ0 pins after the access time (t
OE
) has
elapsed from the falling edge of OE#, assuming the t
ACC
access time has been meet.
7.5
Page Read Mode
The device is capable of fast page mode read and is compatible with the page mode Mask ROM read
operation. This mode provides faster read access speed for random locations within a page. The page size of
the device is 8 words/16 bytes. The appropriate page is selected by the higher address bits A(max)-A3.
Address bits A2-A0 in word mode (A2 to A-1 in byte mode) determine the specific word within a page. The
microprocessor supplies the specific word location.
The random or initial page access is equal to t
ACC
or t
CE
and subsequent page read accesses (as long as the
locations specified by the microprocessor falls within that page) is equivalent to t
PACC
. When CE# is de-
asserted and reasserted for a subsequent access, the access time is t
ACC
or t
CE
. Fast page mode accesses
are obtained by keeping the “read-page addresses” constant and changing the “intra-read page” addresses.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL128P90TFIV12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| STK435-xxx | THICK FILM HYBRID IC |
| STK436-xxx | THICK FILM HYBRID IC |
| STK437-xxx | THICK FILM HYBRID IC |
| STK439-xxx | THICK FILM HYBRID IC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128P10TFI010 | 功能描述:閃存 128Mb 3V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL128P10TFI010 | 制造商:Spansion 功能描述:IC SM FLASH 3V 128MB 100NS |
| S29GL128P10TFI010-AU | 制造商:Spansion 功能描述:SPZS29GL128P10TFI010-AU IC 128M PAGE-MO |
| S29GL128P10TFI012 | 制造商:Spansion 功能描述:IC 128M PAGE-MODE FLASH MEMORY - Trays |
| S29GL128P10TFI013 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 56TSOP - Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。