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參數(shù)資料
| 型號： | S29GL032M10BAIR63 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | MirrorBit Flash Family |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PBGA48 |
| 封裝： | 8 X 6 MM, BGA-48 |
| 文件頁數(shù)： | 4/159頁 |
| 文件大小： | 2217K |
| 代理商： | S29GL032M10BAIR63 |
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4
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00_B3 Octorber 18, 2004
DQ7: Data# Polling ...........................................................................................115
Figure 7. Data# Polling Algorithm....................................... 116
RY/BY#: Ready/Busy# ......................................................................................116
DQ6: Toggle Bit I ...............................................................................................117
Figure 8. Toggle Bit Algorithm............................................ 118
DQ2: Toggle Bit II ...............................................................................................119
Reading Toggle Bits DQ6/DQ2 .....................................................................119
DQ5: Exceeded Timing Limits .......................................................................119
DQ3: Sector Erase Timer ................................................................................119
DQ1: Write-to-Buffer Abort .........................................................................120
Table 37. Write Operation Status ........................................120
Figure 9. Maximum Negative Overshoot Waveform............... 121
Figure 10. Maximum Positive
Overshoot Waveform........................................................ 121
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 121
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 122
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Figure 11. Test Setup ....................................................... 123
Table 38. Test Specifications ..............................................123
Key to Switching Waveforms . . . . . . . . . . . . . . 123
Figure 12. Input Waveforms and
Measurement Levels......................................................... 123
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 124
Read-Only Operations-S29GL256M only ..................................................124
Read-Only Operations-S29GL128M only ...................................................124
Read-Only Operations-S29GL064M only ..................................................125
Read-Only Operations-S29GL032M only ..................................................125
Figure 13. Read Operation Timings..................................... 126
Figure 14. Page Read Timings............................................ 126
Hardware Reset (RESET#) .............................................................................127
Figure 15. Reset Timings................................................... 127
Erase and Program Operations-S29GL256M only ..................................128
Erase and Program Operations-S29GL128M Only .................................129
Erase and Program Operations-S29GL064M Only ................................130
Erase and Program Operations-S29GL032M only ....................................131
Figure 16. Program Operation Timings................................ 132
Figure 17. Accelerated Program Timing Diagram .................. 132
Figure 18. Chip/Sector Erase Operation Timings................... 133
Figure 19. Data# Polling Timings (During Embedded Algorithms) .
133
Figure 20. Toggle Bit Timings (During Embedded Algorithms) 134
Figure 21. DQ2 vs. DQ6.................................................... 134
Temporary Sector Unprotect .......................................................................134
Figure 22. Temporary Sector Group Unprotect Timing Diagram 135
Figure 23. Sector Group Protect and Unprotect Timing Diagram 135
Alternate CE# Controlled Erase and Program Operations-S29GL256M
136
Alternate CE# Controlled Erase and Program Operations-S29GL128M
137
Alternate CE# Controlled Erase and Program Operations-S29GL064M
138
Alternate CE# Controlled Erase and Program Operations-S29GL032M
139
Figure 24. Alternate CE# Controlled Write (Erase/
Program) Operation Timings.............................................. 140
Erase and Programming Performance . . . . . . . . 141
TSOP Pin and BGA Package Capacitance . . . . .142
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . .143
TS040—40-Pin Standard Thin Small Outline Package ...........................143
TSR040—40-Pin Standard/Reverse Thin Small Outline Package (TSOP)
144
TS048—48-Pin Standard/Reverse Thin Small Outline Package (TSOP)
145
TSR048—48-Pin Standard/Reverse Thin Small Outline Package (TSOP)
146
TS056/TSR056—56-Pin Standard/Reverse Thin Small Outline Package
(TSOP) ..................................................................................................................147
LAA064—64-Ball Fortified Ball Grid Array (FBGA) ..............................148
LAC064—64-Pin 18 x 12 mm package .........................................................149
FBA048—48-Pin 6.15 x 8.15 mm package ...................................................150
FBC048—48-Pin 8 x 9 mm package ............................................................151
FBE063—63-Pin 12 x 11 mm package ............................................................152
FPT-48P-M19 .......................................................................................................153
FPT-56P-M01 .......................................................................................................153
FBG048—48-pin 8 x 6 mm package ...........................................................154
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . .155
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL032M10BFIR50 | MirrorBit Flash Family |
| S29GL032M10FBCR50 | MirrorBit Flash Family |
| S29GL064N11FFIV20 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| S29GL064N11BFIV22 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| S29GL064N11BFIV60 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL032M10BBCR00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10BBCR02 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10BBCR03 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10BBCR10 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10BBCR12 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
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