參數(shù)資料
型號： S29GL032M10BAIR63
廠商： SPANSION LLC
元件分類： DRAM
英文描述： MirrorBit Flash Family
中文描述： 2M X 16 FLASH 3V PROM, 100 ns, PBGA48
封裝： 8 X 6 MM, BGA-48
文件頁數(shù)： 111/159頁
文件大?。?/td> 2217K
代理商： S29GL032M10BAIR63
Octorber 18, 2004 S29GLxxxM_00_B3
S29GLxxxM MirrorBit
TM
Flash Family
111
D a t a s h e e t
l
Figure 6. Erase Operation
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for erasure. This command is valid only during the sector erase
operation, including the 50 μs time-out period during the sector erase command sequence. The Erase Suspend
command is ignored if written during the chip erase operation or Embedded Program algorithm.
When the Erase Suspend command is written during the sector erase operation, the device requires a typical of
5
μ
s
(
maximum of 20
μ
s) to suspend the erase operation. However, when the Erase Suspend command is written
during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase
operation.
After the erase operation is suspended, the device enters the erase-suspend-read mode. The system can read
data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors se-
lected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7–
DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-
suspended. Refer to the Write Operation Status section for information on these status bits.
After an erase-suspended program operation is complete, the device returns to the erase-suspend-read mode.
The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the
standard word program operation. Refer to the Write Operation Status section for more information.
In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the
“Au-
toselect Mode” on page 79
and
“Autoselect Command Sequence” on page 104
sections for details.
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See
Table 35 on page 113
and
Table 36 on
page 114
for program command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
相關PDF資料
PDF描述
S29GL032M10BFIR50 MirrorBit Flash Family
S29GL032M10FBCR50 MirrorBit Flash Family
S29GL064N11FFIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFIV60 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
相關代理商/技術參數(shù)
參數(shù)描述
S29GL032M10BBCR00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10BBCR02 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10BBCR03 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10BBCR10 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10BBCR12 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
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