參數(shù)資料
型號(hào)： S29AL016D70TFI013
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 16 MEGABIT CMOS 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY
中文描述： 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝： LEAD FREE, MO-142DDD, TSOP-48
文件頁(yè)數(shù)： 12/58頁(yè)
文件大小： 1037K
代理商： S29AL016D70TFI013
12
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
Standby Mode
When the system is not reading or writing to the device, it can place the device
in the standby mode. In this mode, current consumption is greatly reduced, and
the outputs are placed in the high impedance state, independent of the OE#
input.
The device enters the CMOS standby mode when the CE# and RESET# pins are
both held at V
CC
±
0.3 V. (Note that this is a more restricted voltage range than
V
IH
.) If CE# and RESET# are held at V
IH
, but not within V
CC
±
0.3 V, the device
will be in the standby mode, but the standby current will be greater. The device
requires standard access time (t
CE
) for read access when the device is in either
of these standby modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws ac-
tive current until the operation is completed.
In the
DC Characteristics
table, I
CC3
and I
CC4
represents the standby current
specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The de-
vice automatically enables this mode when addresses remain stable for t
ACC
+ 30
ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control
signals. Standard address access timings provide new data when addresses are
changed. While in sleep mode, output data is latched and always available to the
system. I
CC4
in the
DC Characteristics
table represents the automatic sleep mode
current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading
array data. When the system drives the RESET# pin to V
IL
for at least a period of
t
RP
, the device
immediately terminates
any operation in progress, tristates all
data output pins, and ignores all read/write attempts for the duration of the RE-
SET# pulse. The device also resets the internal state machine to reading array
data. The operation that was interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held
at V
SS
± 0.3 V, the device draws CMOS standby current (I
CC4
). If RESET# is held
at V
IL
but not within V
SS
± 0.3 V, the standby current will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would
thus also reset the Flash memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin re-
mains a “0” (busy) until the internal reset operation is complete, which requires
a time of t
READY
(during Embedded Algorithms). The system can thus monitor RY/
BY# to determine whether the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing (RY/BY# pin is “1”), the reset
operation is completed within a time of t
READY
(not during Embedded Algorithms).
The system can read data t
RH
after the RESET# pin returns to V
IH
.
Refer to the
AC Characteristics
tables for RESET# parameters and to
Figure 14
for the timing diagram.
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