參數(shù)資料
型號： S1C60N08D
元件分類： 微控制器/微處理器
英文描述： 4-BIT, MROM, 0.032768 MHz, MICROCONTROLLER, UUC96
封裝： DIE-96
文件頁數(shù)： 11/28頁
文件大?。?/td> 325K
代理商： S1C60N08D
19
S1C60N08/60R08
q Oscillation Characteristics
Oscillation characteristics will vary according to different conditions (elements used, boad pattern). Use the following char-
acteristics are as reference values.
S1C60N08/60R08 (OSC1 Crystal Oscillation)
Characteristic
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage
Permitted leak resistance
Symbol
Vsta
Vstp
CD
f/V
f/IC
f/CG
Vhho
Rleak
Unit
V
pF
ppm
V
M
Max.
5
10
-3.5
Typ.
20
45
Min.
-1.8
-10
35
200
Condition
tsta
≤5sec (VSS)
tstp
≤10sec (VSS)
Including the parasitic capacitance inside the chip
VSS=-1.8 to -3.5V
CG=5 to 25pF
(VSS)
Between OSC1 and VDD
(Unless otherwise specified: VDD=0V, VSS=-3.0V, Crystal: Q13MC146, CG=25pF, CD=built-in, Ta=25
°C)
S1C60L08 (OSC1 Crystal Oscillation)
Characteristic
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage
Permitted leak resistance
1:
Symbol
Vsta
Vstp
CD
f/V
f/IC
f/CG
Vhho
Rleak
Unit
V
pF
ppm
V
M
Max.
5
10
-1.7
Typ.
20
45
Min.
-1.1
(-0.9)1
-10
35
200
Parentheses indicate value for operation in heavy load protection mode.
Condition
tsta
≤5sec (VSS)
tstp
≤10sec (VSS)
Including the parasitic capacitance inside the chip
VSS=-1.1 (-0.9)1 to -1.7V
CG=5 to 25pF
(VSS)
Between OSC1 and VDD
(Unless otherwise specified: VDD=0V, VSS=-1.5V, Crystal: Q13MC146, CG=25pF, CD=built-in, Ta=25
°C)
S1C60A08 (OSC1 Crystal Oscillation)
Characteristic
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage
Permitted leak resistance
Symbol
Vsta
Vstp
CD
f/V
f/IC
f/CG
Vhho
Rleak
Unit
V
pF
ppm
V
M
Max.
5
10
-3.5
Typ.
20
45
Min.
-2.2
-10
35
200
Condition
tsta
≤5sec (VSS)
tstp
≤10sec (VSS)
Including the parasitic capacitance inside the chip
VSS=-2.2 to -3.5V
CG=5 to 25pF
(VSS)
Between OSC1 and VDD
(Unless otherwise specified: VDD=0V, VSS=-3.0V, Crystal: Q13MC146, CG=25pF, CD=built-in, Ta=25
°C)
S1C60A08/60R08 (OSC3 CR Oscillation)
Characteristic
Oscillation frequency dispersion
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
Symbol
fOSC3
Vsta
tsta
Vstp
Unit
%
V
msec
V
Max.
30
3
Typ.
480kHz
Min.
-30
-2.2
Condition
(VSS)
VSS=-2.2 to -3.5V
(VSS)
(Unless otherwise specified: VDD=0V, VSS=-3.0V, RCR=82k
, Ta=25°C)
S1C60A08/60R08 (OSC3 Ceramic Oscillation)
Characteristic
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
Symbol
Vsta
tsta
Vstp
Unit
V
msec
V
Max.
5
Typ.
Min.
-2.2
Condition
(VSS)
VSS=-2.2 to -3.5V
(VSS)
(Unless otherwise specified: VDD=0V, VSS=-3.0V, Ceramic oscillator: 500kHz, CGC=CDC=100pF, Ta=25
°C)
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