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參數(shù)資料
| 型號： | RX1214B300Y |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Microwave power transistor(NPN 微波功率晶體管) |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-439A, 3 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 74K |
| 代理商： | RX1214B300Y |
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
RX1214B300Y
FEATURES
Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry improves power sharing and reduces
thermal resistance
Internal input and output matching networks for an easy
circuit design.
APPLICATIONS
Common base class-C wideband amplifiers operating
under pulsed conditions, recommended for L-band
radar applications.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT439A metal ceramic flange package with the base
connected to the flange.
PINNING - SOT439A
PIN
DESCRIPTION
1
2
3
collector
emitter
base connected to flange
Fig.1 Simplified outline and symbol.
olumns
e
c
b
MAM045
1
2
Top view
3
3
QUICK REFERENCE DATA
Microwave performance at T
mb
≤
25
°
C in a common base class-C wideband amplifier.
MODE OF OPERATION
f
(GHz)
V
CC
(V)
P
L
(W)
≥
250
G
P
(dB)
≥
7
η
C
(%)
≥
35
Z
i
; Z
L
(
)
see Fig 6
Class-C
t
p
= 150
μ
s;
δ
= 5 %
1.2 to 1.4
50
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RX1214B300Y TRAY | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| RX1214B300Y,114 | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| RX1214B350Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN microwave power transistor |
| RX1214B80W | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN microwave power transistors |
| RX-1215D | 制造商:RECOM 制造商全稱:Recom International Power 功能描述:1 Watt SIP7 & DIP14 Single & Dual Output |
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