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參數(shù)資料
| 型號： | RURP640CC |
| 廠商： | INTERSIL CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 6A, 400V Ultrafast Dual Diodes(6A, 400V 超快速雙二極管) |
| 中文描述： | 6 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 75K |
| 代理商： | RURP640CC |
6-56
Specifications RURP640CC, RURP650CC, RURP660CC
Electrical Specifications
(per leg) T
C
= +25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
LIMITS
UNITS
RURP640CC
RURP650CC
RURP660CC
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
V
F
I
F
= 6A, T
C
= +25
o
C
I
F
= 6A, T
C
= +150
o
C
V
R
= 400V, T
C
= +25
o
C
V
R
= 500V, T
C
= +25
o
C
V
R
= 600V, T
C
= +25
o
C
V
R
= 400V, T
C
= +150
o
C
V
R
= 500V, T
C
= +150
o
C
V
R
= 600V, T
C
= +150
o
C
-
-
1.5
-
-
1.5
-
-
1.5
V
-
-
1.2
-
-
1.2
-
-
1.2
V
I
R
-
-
100
-
-
-
-
-
-
μ
A
-
-
-
-
-
100
-
-
-
μ
A
-
-
-
-
-
-
-
-
100
μ
A
I
R
-
-
500
-
-
-
-
-
-
μ
A
-
-
-
-
-
500
-
-
-
μ
A
-
-
-
-
-
-
-
-
500
μ
A
t
RR
I
F
= 1A, dI
F
/dt = 200A/
μ
s
-
-
55
-
-
55
-
-
55
ns
I
F
= 6A, dI
F
/dt = 200A/
μ
s
-
-
60
-
-
60
-
-
60
ns
t
A
I
F
= 6A, dI
F
/dt = 200A/
μ
s
-
28
-
-
28
-
-
28
-
ns
t
B
I
F
= 6A, dI
F
/dt = 200A/
μ
s
-
16
-
-
16
-
-
16
-
ns
Q
RR
I
F
= 6A, dI
F
/dt = 200A/
μ
s
-
150
-
-
150
-
-
150
-
nC
C
J
V
R
= 10V, I
F
= 0A
-
25
-
-
25
-
-
25
-
pF
R
θ
JC
-
-
3
-
-
3
-
-
3
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
μ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (See Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θ
JC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy. (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. t
RR
WAVEFORMS AND DEFINITIONS
C1
L
LOOP
DUT
Q
3
R
3
Q
4
Q
2
R
1
R
2
-V
4
Q
1
-V
2
0
0
+V
1
t
1
t
2
t
3
R
4
+V
3
V
1
AMPLITUDE CONTROLS I
F
V
2
AMPLITUDE CONTROLS dI
F
/dt
L
1
= SELF INDUCTANCE OF
R
4
+ L
LOOP
t
1
≥
5t
A(MAX)
t
2
> t
RR
t
3
> 0
L
1
R
4
t
A(MIN)
10
≤
dt
dI
F
I
F
t
RR
t
A
t
B
0
I
RM
0.25 I
RM
V
R
V
RM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RURP650CC | 6A, 500V Ultrafast Dual Diodes(6A, 500V 超快速雙二極管) |
| RURP660CC | 6A, 600V Ultrafast Dual Diodes(6A, 600V 超快速雙二極管) |
| RURP8100CC | 8A, 1000V Ultrafast Dual Diode(8A, 1000V 超快速雙二極管) |
| RURP8100 | 8A, 1000V Ultrafast Diodes(8A, 1000V超快二極管,用于開關(guān)電源) |
| RURP8100 | 8A, 1000V Ultrafast Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RURP650CC | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6A, 400V - 600V Ultrafast Dual Diodes |
| RURP660CC | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6A, 400V - 600V Ultrafast Dual Diodes |
| RURP810 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RURP8100 | 功能描述:整流器 TO-220AC Ultra Fast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| RURP8100 | 制造商:Fairchild Semiconductor Corporation 功能描述:FAST RECOVERY DIODE, 8A, 1KV, TO-220AC |
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