
2002 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. B1
MUR8100E, RURP8100
8A, 1000V Ultrafast Diodes
The MUR8100E and RUR8100 are ultrafast diodes 
(t
rr
< 75ns) with soft recovery characteristics. They have a 
low forward voltage drop and are of planar, silicon nitride 
passivated, ion-implanted, epitaxial construction.
These devices are intended for use as energy steering/
clamping diodes and rectifiers in a variety of switching power 
supplies and other power switching applications. Their low 
stored charge and ultrafast recovery with soft recovery 
characteristics minimize ringing and electrical noise in many 
power switching circuits, thus reducing power loss in the 
switching transistor.
Formerly developmental type TA09617.
Symbol
Features
 Ultrafast with Soft Recovery  . . . . . . . . . . . . . . . . . . <75ns
 Operating Temperature  . . . . . . . . . . . . . . . . . . . . . .175
o
C
 Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
 Avalanche Energy Rated
 Planar Construction
Applications
 Switching Power Supply
 Power Switching Circuits
 General Purpose
Packaging
JEDEC TO-220AC
Ordering Information
PART NUMBER
PACKAGE
BRAND
MUR8100E
TO-220AC
MU8100
RURP8100
TO-220AC
RURP8100
NOTE: When ordering, use entire part number.
K
A
CATHODE
(FLANGE)
CATHODE
ANODE
Absolute Maximum Ratings
 T
C
 = 25
o
C, Unless Otherwise Specified
MUR8100E 
RURP8100
UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RWM
DC Blocking Voltage  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
 = 155
o
C)
Repetitive Peak Surge Current  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave 20kHz)
1000
V
1000
V
1000
V
8
A
16
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave 1 Phase 60Hz)
100
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Avalanche Energy (See Figures 10 and 11)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
75
W
20
mJ
o
C
-55 to 175
Data Sheet
December 2002