參數(shù)資料
型號： RN5006
廠商： Toshiba Corporation
英文描述： TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
中文描述： 東芝npn型晶體管硅外延型（厘進程）
文件頁數(shù)： 1/3頁
文件大小： 91K
代理商： RN5006
RN5006
2001-10-29
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN5006
Motor Drive Circuit Applications
Power Amplifier Applications
Power Switching Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Small flat package
P
C
= 1~2W (mounted on ceramic substrate)
Complementary to RN6006
Equivalent Circuit
Maximum Ratings
(Ta = 25°C)
Marking
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
10
V
Collector-emitter voltage
V
CEO
10
V
Emitter-base voltage
V
EBO
6
V
DC
I
C
2
Collector current
Pulse (Note1)
I
CP
4
A
Base current
I
B
0.4
A
Collector power dissipation
P
C
500
mW
Collector power dissipation
P
C
*
1000
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
30 %
55~150
°C
Note
: Pulse width
*
: Mounterd on ceramic substrate (250mm
2
× 0.8t)
10ms, duty cycle
JEDEC
JEITA
TOSHIBA
Weight: 0.05g (typ.)
―
SC-62
2-5K1A
Unit: mm
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