參數(shù)資料
型號: RFP8P05
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: 8A, 50V, 0.300 Ohm,N-Channel PowerMOSFET(8A, 50V, 0.300 Ohm,N溝道增強型功率MOS場效應(yīng)管)
中文描述: 8 A, 50 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 4/6頁
文件大?。?/td> 51K
代理商: RFP8P05
4-115
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
N
3.0
1.0
0.5
0
0
50
T
J
, JUNCTION TEMPERATURE (
o
C)
150
1.5
100
2.0
2.5
200
-50
PULSE DURATION = 80
μ
s
DUTY CYCLE =0.5% MAX
V
GS
= -10V, I
D
= -8A
-50
50
0
100
150
1.50
T
T
J
, JUNCTION TEMPERATURE (
o
C)
200
V
GS
= V
DS
, I
D
= -250
μ
A
1.25
1.00
0.75
0.50
0.25
0
N
2.0
1.0
0.5
0
0
T
J
, JUNCTION TEMPERATURE (
o
C)
50
100
1.5
B
150
200
I
D
= -250
μ
A
-50
800
600
400
200
0
0
-5
-10
-15
-20
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1000
-25
C
ISS
C
RSS
C
OSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
-10
-8
-6
-4
-2
0
-12.5
-25
-37.5
-50
0
TIME (
μ
s)
V
G
,
V
D
,
V
DD
= BV
DSS
20I
G(REF)
I
G(ACT)
80I
G(REF)
I
G(ACT)
GATE
SOURCE
VOLTAGE
R
L
= 6.25
I
G(REF)
= 0.3mA
V
GS
= 10V
V
DD
= BV
DSS
DRAIN TO SOURCE
VOLTAGE
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
RFD8P05, RFD8P05SM, RFP8P05
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