參數(shù)資料
型號： RFP8P05
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 8A, 50V, 0.300 Ohm,N-Channel PowerMOSFET(8A, 50V, 0.300 Ohm,N溝道增強型功率MOS場效應管)
中文描述： 8 A, 50 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/6頁
文件大?。?/td> 51K
代理商： RFP8P05
4-113
Absolute Maximum Ratings
T
C
= 25
o
C Unless Otherwise Specified
RFD8P05,
RFD8P05SM, RFP8P05
-50
-50
-8
-20
±
20
48
0.27
See Figure 6
-55 to 175
UNITS
V
V
A
A
V
W
W/
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20K
)
(Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 9)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 8)
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, T
J
= 150
o
C
V
GS
=
±
20V
I
D
= 8A, V
GS
= -10V (Figure 7)
V
DD
= -25V, I
D
≈
4A, R
G
= 9.1
, R
L
= 6.25
,
V
GS
= -10V
-50
-
-
V
Gate Threshold Voltage
-2
-
-4
V
Zero Gate Voltage Drain Current
-
-
1
μ
A
μ
A
-
-
25
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(-10)
Q
g(TH)
R
θ
JC
R
θ
JA
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
-
0.300
Turn-On Time
-
-
60
ns
Turn-On Delay Time
-
16
-
ns
Rise Time
-
30
-
ns
Turn-Off Delay Time
-
42
-
ns
Fall Time
-
20
-
ns
Turn-Off Time
-
-
100
ns
Total Gate Charge
V
GS
= 0 to -20V
V
GS
= 0 to -10V
V
GS
= 0 to -2V
V
DD
= -40V, I
D
= 8A,R
L
= 5
,
I
G(REF)
= -0.3mA
-
-
80
nC
Gate Charge at -5V
-
-
40
nC
Threshold Gate Charge
-
-
2
nC
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction to Case
-
-
3.125
Thermal Resistance Junction to Ambient
TO-251AA, TO-252AA
-
-
100
TO-220AB
62.5
Source to Drain Diode Specifications
T
C
= 25
o
C Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= -8A
-
-
-1.5
V
Reverse Recovery Time
t
rr
I
SD
= -8A, dI
SD
/dt = 100A/
μ
s
-
-
125
ns
NOTE:
2. Pulse test: pulse width
≤
300
μ
s, Duty Cycle
≤
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFD8P05, RFD8P05SM, RFP8P05
相關PDF資料
PDF描述
RFD8P05 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs
RFD8P05SM 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs
RFP8P06E 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs(8A, 60V, 0.300 Ω,P溝道功率MOS場效應管)
RFD8P06E 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs
RFD8P06ESM 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs
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