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參數資料
| 型號： | RFP8P05 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 8A, 50V, 0.300 Ohm,N-Channel PowerMOSFET(8A, 50V, 0.300 Ohm,N溝道增強型功率MOS場效應管) |
| 中文描述： | 8 A, 50 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 3/6頁 |
| 文件大?。?/td> | 51K |
| 代理商： | RFP8P05 |
4-114
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
-4
-2
0
25
50
75
100
125
150
-8
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-10
-6
175
10
1
0.1
-1
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
C
= 25
o
C
T
J
= 175
o
C
DC OPERATION
OPERATION IN THIS
AREA IS LIMITED BY r
DS(ON)
100
10
1
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
I
DM
0
0
-2
-4
-6
-10
-8
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -6V
V
GS
= -10V
-8
V
GS
= -7V
V
GS
= -5V
V
GS
= -4V
V
GS
= -8V
-20
-12
-16
-4
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= -9V
0
-6
-9
-12
-15
-3
0
8
175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
25
o
C
20
16
12
4
RFD8P05, RFD8P05SM, RFP8P05
相關PDF資料 |
PDF描述 |
|---|---|
| RFD8P05 | 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs |
| RFD8P05SM | 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs |
| RFP8P06E | 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs(8A, 60V, 0.300 Ω,P溝道功率MOS場效應管) |
| RFD8P06E | 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
| RFD8P06ESM | 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RFP8P06E | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
| RFP8P06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP8P08 | 制造商:Harris Corporation 功能描述:MOSFET Transistor, P-Channel, TO-220AB |
| RFP8P10 | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFPA0133 | 制造商:RFMD 功能描述:AMP RF 380-960MHZ 3-5V 16QFN 制造商:RF Micro Devices Inc 功能描述:AMP, RF, 380-960MHZ, 3-5V, 16QFN |
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