參數(shù)資料
型號: RFP2N12
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs
中文描述: 2 A, 120 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 4/5頁
文件大?。?/td> 35K
代理商: RFP2N12
5-4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Applications Notes AN7254 and AN7260
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1.5
1
0.5
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= 10V
I
D
= 2A
N
O
2
0
1.2
1.0
1.4
50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
N
T
V
GS
= V
DS
I
D
= 250
μ
A
0.6
0.8
0
10
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
20
30
40
50
C
160
120
80
40
0
200
240
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
150
112.5
75
37.5
0
10
8
6
4
0
2
GATE
SOURCE
VOLTAGE
I
G(REF)
I
G(ACT)
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
R
L
= 75
I
G(REF)
= 0.095mA
V
GS
= 10V
DRAIN SOURCE
VOLTAGE
V
DD
= BV
DSS
V
DD
= BV
DSS
V
G
,
V
D
,
t, TIME (
μ
s)
20
80
I
G(REF)
I
G(ACT)
RFP2N12, RFP2N15
相關(guān)PDF資料
PDF描述
RFP2N15 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFP2N12L 制造商:Harris Corporation 功能描述:
RFP2N15 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:RCA 功能描述:MOSFET 制造商:Harris Corporation 功能描述:
RFP2N15L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2A I(D) | TO-220AB
RFP2N18 制造商:Harris Corporation 功能描述:
RFP2N18L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 2A I(D) | TO-220AB