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參數(shù)資料
| 型號(hào)： | RFP2N20L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET |
| 中文描述： | 2 A, 200 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | RFP2N20L |
6-256
File Number
2875.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFP2N20L
2A, 200V 3.500 Ohm, Logic Level,
N-Channel Power MOSFET
The RFP2N20L N-Channel enhancement mode silicon gate
power field effect transistor is specifically designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, automotive switching, and
solenoid drivers. This performance is accomplished through
a special gate oxide design which provides full rated
conduction at gate biases in the 3V - 5V range, thereby
facilitating true on-off power control directly from logic circuit
supply voltages.
Formerly developmental type TA09532.
Features
2A, 200V
r
DS(ON)
= 3.500
Design Optimized for 5V Gate Drives
Can be Driven Directly from QMOS, NMOS,
TTL Circuits
Compatible with Automotive Drive Requirements
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2N20L
TO-220AB
RFP2N20L
NOTE: When ordering, include the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
July 1999
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