參數(shù)資料
型號(hào): RFP2N12
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs
中文描述: 2 A, 120 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 3/5頁
文件大?。?/td> 35K
代理商: RFP2N12
5-3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
P
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
2.5
1.5
1.0
0.5
2.0
1
0.10
0.01
10
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
1
OPERATION IN THIS AREA
MAY BE LIMITED BY r
DS(ON)
1000
T
J
= MAX RATED
T
C
= 25
o
C
3
2.5
2
0
0
1
2
3
4
5
6
I
D
,
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
0.5
1
1.5
V
GS
= 4V
V
GS
= 5V
V
GS
= 20V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
2%
T
C
= 25
C
V
GS
= 6V
V
GS
= 7V
V
GS
= 8V
I
D
,
1.5
1
0.5
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
0
2.5
3
-40
o
C
125
o
C
-40
o
C
25
o
C
V
DS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
2%
125
o
C
r
D
,
I
D,
DRAIN CURRENT (A)
3
2
1
0
0
1
2
R
)
4
5
0.5
1.5
2.5
25
o
C
125
o
C
-40
o
C
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
2%
RFP2N12, RFP2N15
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFP2N12L 制造商:Harris Corporation 功能描述:
RFP2N15 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:RCA 功能描述:MOSFET 制造商:Harris Corporation 功能描述:
RFP2N15L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2A I(D) | TO-220AB
RFP2N18 制造商:Harris Corporation 功能描述:
RFP2N18L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 2A I(D) | TO-220AB