- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374589 > RFP25N05L (HARRIS SEMICONDUCTOR) 25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | RFP25N05L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET |
| 中文描述： | 25 A, 50 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 47K |
| 代理商： | RFP25N05L |
6-246
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED GATE TO THRESHOLD vs
JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
GS
, GATE TO SOURCE VOLTAGE (V)
5
4
7
1.4
1.1
1.0
0.7
0.9
0.8
0.6
6
0.5
I
D
= 25A
1.2
1.3
N
O
μ
s
PULSE DURATION = 80
2.5
-50
T
J
, JUNCTION TEMPERATURE (
o
C)
2.0
0
100
0
50
150
200
I
D
= 25A, VGS = 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
1.0
1.5
0.5
N
O
1.1
0.9
0.7
-50
T
J
, JUNCTION TEMPERATURE (
o
C)
1.0
0.8
0.6
0
200
50
100
150
1.2
1.3
1.4
I
D
= 250
μ
A
V
GS
= V
DS
1.4
1.0
0.8
50
-50
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.2
0
100
200
B
0
150
I
D
= 250
μ
A
0.6
0
10
15
20
25
C
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
2000
1600
1200
0
5
800
400
C
ISS
C
RSS
C
OSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
50
37.5
12.5
0
20
(
)
)
IG ACT
t, TIME (
μ
s)
80
(
)
)
IG ACT
10
8
6
2
0
V
D
,
V
G
,
DD
= BV
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
GATE
DEV
R
L
= 2
,
V
GS
= 5V
I
= 0.60mA
PLATEAU VOLTAGES IN
25
4
DRAIN SOURCE VOLTAGE
SOURCE
VOLTAGE
V
DD
= BV
DSS
V
DD
= BV
DSS
RFP25N05L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP25N05 | 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET |
| RFP25N05 | POWER MOS FIELD EFFECT TRANSISTORS |
| RFP25N06 | POWER MOS FIELD EFFECT TRANSISTORS |
| RFP25N06 | 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs |
| RFP25N06 | 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP25N06 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs |
| RFP25N06L | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP2N08 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP2N08L | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP2N10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。