參數(shù)資料
型號(hào): RFP25N05L
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET
中文描述: 25 A, 50 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 3/6頁
文件大?。?/td> 47K
代理商: RFP25N05L
6-245
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING SOA
(SINGLE PULSE UIS SOA)
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
0
25
50
75
100
150
10
20
30
125
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
10
2
1
I
D
,
10
2
10
V
DSS
(MAX) = 50V
DC
1
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
I
D
MAX CONTINUOUS
T
J
= MAX RATED, T
C
= 25
o
C
10
10
2
Idm
1
0.01
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
1
10
0.10
t
AV
= (L)(I
AS
)/(1.3 RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3 RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
I
D
,
0
3.0
4.5
7.5
1.5
35
55
15
65
45
25
5
6.0
10V
V
GS
= 4.0V
3.0V
5.0V
T
C
= 25
o
C
2.0V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
3.0
4.5
7.5
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
35
I
D
,
55
15
65
V
DS
= 15V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
45
25
5
6.0
RFP25N05L
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