參數(shù)資料
型號： RFP25N05L
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET
中文描述： 25 A, 50 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/6頁
文件大?。?/td> 47K
代理商： RFP25N05L
6-244
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP25N05L
50
50
25
65
Refer to UIS SOA Curve
±
10
60
0.48
-55 to 150
UNITS
V
V
A
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Energy Rating (See Figures 4, 15, and 16). . . . . . . . . . . . . . . . . . . . . .
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
V
W
W/
o
C
o
C
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A (Figure 10)
50
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 9)
1.0
-
2.0
V
Gate to Source Leakage
I
GSS
V
GS
=
±
10V, V
DS
= 0V
-
-
±
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40V, V
GS
= 0V
T
C
= 150
o
C
-
-
1.0
μ
A
-
-
50
μ
A
Drain to Source On Resistance (Note 2)
r
DS(ON)
V
GS
= 5V, I
D
= 25A
(Figures 7, 8)
-
-
0.047
V
GS
= 4V, I
D
= 25A
-
-
0.056
Turn-On Time
t
(ON)
V
DD
= 25V, I
D
=12.5A
R
L
= 2
,
R
GS
= 5
(Figures 15, 16)
-
-
60
ns
Turn-On Delay Time
t
d(ON)
-
15
-
ns
Rise Time
t
r
-
35
-
ns
Turn-Off Delay Time
t
d(OFF)
-
40
-
ns
Fall Time
t
f
-
14
-
ns
Turn-Off Time
t
(OFF)
-
-
100
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 0 - 10V
V
DD
= 40V, I
D
= 25A,
R
L
= 1.6
(Figures 17, 18)
-
-
80
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0 - 5V
-
-
45
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0 - 1V
-
-
3.0
nC
Thermal Resistance Junction to Case
R
θ
JC
-
-
2.083
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
-
-
80
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 25A
-
-
1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= 25A, dI
SD
/dt = 100A/
μ
s
-
-
125
ns
NOTES:
2. Pulse Test: Pulse width
≤
80
μ
s, duty cycle
≤
2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature.
RFP25N05L
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