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參數(shù)資料
| 型號(hào)： | RFP12N06 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| 中文描述： | 第17A，60V的，0.071 Ohm的N通道，邏輯電平UltraFET功率MOSFET |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 43K |
| 代理商： | RFP12N06 |
5
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
FIGURE 13. GATE CHARGE TEST CIRCUIT
FIGURE 14. GATE CHARGE WAVEFORMS
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
0.3
μ
F
12V
BATTERY
50k
V
DS
S
DUT
D
G
I
G(REF)
0
(ISOLATED
SUPPLY)
V
DS
0.2
μ
F
CURRENT
REGULATOR
I
D
CURRENT
SAMPLING
RESISTOR
I
G
CURRENT
SAMPLING
RESISTOR
SAME TYPE
AS DUT
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
V
GS
V
DD
I
G(REF)
0
RFM12N08, RFM12N10, RFP12N08, RFP12N10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP12N06RLE | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| RFP12N10L | 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET(12A, 100V, 0.200 Ω,邏輯電平N溝道功率MOS場(chǎng)效應(yīng)管) |
| RFP12N10L | 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET |
| RFP12P08 | 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 和 100V, 0.300 Ω, P溝道增強(qiáng)模式功率MOS場(chǎng)效應(yīng)管) |
| RFP12P10 | 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 和 100V, 0.300 Ω, P溝道增強(qiáng)模式功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP12N06RLE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP12N08 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs |
| RFP12N08L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 12A I(D) | TO-220AB |
| RFP12N10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP12N1093 | 制造商:Harris Corporation 功能描述: |
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