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參數(shù)資料
| 型號： | RFP12N06 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| 中文描述： | 第17A，60V的，0.071 Ohm的N通道，邏輯電平UltraFET功率MOSFET |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 43K |
| 代理商： | RFP12N06 |
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs
DRAIN CURRENT
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
14
12
10
8
6
4
2
0
RFP12N08, RFP12N10
RFM12N08, RFM12N10
T
C
= 25
o
C
1
10
100
1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
10
1
0
I
D
,
I
D
(MAX)
CONTINUOUS
DCOPERATON
V
DSS
(MAX) 80V
RFM12N08, RFP12N08
V
DSS
(MAX) 100V
RFM12N10, RFP12N10
OPERATION IN
THIS AREA MAY BE
LIMITED BY r
DS(ON)
0
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
6
8
10
16
12
8
4
0
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 20V
V
GS
= 9V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
2
4
6
8
10
12
16
12
8
4
0
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
V
DS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= -40
o
C
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
0.8
0
0.6
0.4
0.2
r
D
,
O
)
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= -40
o
C
RFM12N08, RFM12N10, RFP12N08, RFP12N10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP12N06RLE | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| RFP12N10L | 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET(12A, 100V, 0.200 Ω,邏輯電平N溝道功率MOS場效應(yīng)管) |
| RFP12N10L | 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET |
| RFP12P08 | 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 和 100V, 0.300 Ω, P溝道增強(qiáng)模式功率MOS場效應(yīng)管) |
| RFP12P10 | 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 和 100V, 0.300 Ω, P溝道增強(qiáng)模式功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP12N06RLE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP12N08 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs |
| RFP12N08L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 12A I(D) | TO-220AB |
| RFP12N10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP12N1093 | 制造商:Harris Corporation 功能描述: |
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