參數(shù)資料
型號(hào)： RFM7N35
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs
中文描述： 7 A, 350 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
文件頁數(shù)： 3/4頁
文件大?。?/td> 47K
代理商： RFM7N35
5-3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
8
7
6
5
4
3
2
1
0
RFM7N40
RFP7N40
T
C
= 25
o
C
T
J
= MAX RATED
1
10
100
1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
10
1
0
I
D
,
I
D
(MAX)
CONTINUOUS
DCOPERATON
RFM7N35, RFP7N35
RFM7N40, RFP7N40
OPERATION IN
THIS AREA IS
LIMITED BY r
DS(ON)
RFM7N35, 40
RFP7N35, 40
0
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
8
12
16
20
16
12
8
4
0
I
D
,
PULSE DURATION = 80
μ
s
T
C
= 25
o
C
V
GS
= 7V TO 20V
V
GS
= 5V
V
GS
= 6V
V
GS
= 4V
0
2
4
6
8
10
16
12
8
4
0
V
GS
, GATE TO SOURCE (V)
I
D
,
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 125
o
C
V
DS
= 10V
PULSE DURATION = 250
μ
s
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
1.8
0.2
1.4
1
0.6
r
D
,
O
)
V
GS
= 10V
PULSE DURATION = 250
μ
s
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= -40
o
C
RFM7N35, RFM7N40, RFP7N35, RFP7N40
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