- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374588 > RFM7N35 (HARRIS SEMICONDUCTOR) 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號(hào)： | RFM7N35 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 7 A, 350 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 47K |
| 代理商： | RFM7N35 |
5-1
Semiconductor
July 1998
Features
7A, 350V and 400V
r
DS(ON)
= 0.75
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17424.
Symbol
Packaging
JEDEC TO-204AA
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM7N35
TO-204AA
RFM7N35
RFM7N40
TO-204AA
RFM7N40
RFP7N35
TO-220AB
RFP7N35
RFP7N40
TO-220AB
RFP7N40
NOTE: When ordering, use the entire part number.
D
G
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1998
File Number
1536.2
RFM7N35, RFM7N40,
RFP7N35, RFP7N40
7A, 350V and 400V, 0.75 Ohm,
N-Channel Power MOSFETs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP10N15 | 10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs |
| RFP10P03L | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場效應(yīng)管) |
| RFD10P03L | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場效應(yīng)管) |
| RFD10P03LSM | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場效應(yīng)管) |
| RFP10P15 | P-Channel Power MOSFET(P溝道增強(qiáng)模式功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFM7N40 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs |
| RFM8005 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BROADBAND WCDMA/LTE DUAL TRANSMIT IC The RFM8005 is a multi-band dual channel broadband CMOS Transmit IC optimized for linear applications such as LTE and WCDMA in the 698MHz to 915MHz bands and 1710 to 1980MHz bands. |
| RFM8N18 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL LOGIC LEVEL POWER FIELD EFFECT TRANSISTORS |
| RFM8N18L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL LOGIC LEVEL POWER FIELD EFFECT TRANSISTORS |
| RFM8N20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-3 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。