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參數(shù)資料
| 型號： | RFM3N50 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 81K |
| 代理商： | RFM3N50 |
4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
= 3A, V
GS
=10V
PULSE DURATION = 80
μ
s
2
1.5
1
0.5
0-50
0
50
100
150
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
O
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
0.6
1.4
0
50
100
150
200
T
J
, JUNCTION TEMPERATURE(
o
C)
N
V
DS
= 10V
I
D
= 250
μ
A
T
0
10
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
40
50
60
70
80
90
100
800
700
600
500
400
300
200
100
0
C
C
OSS
C
RSS
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
500
375
250
125
0
10
8
6
4
2
0
I
G(REF)
I
G(ACT)
20
I
G(REF)
I
G(ACT)
80
V
G
,
V
DD
= BV
DSS
V
DD
= BV
DSS
DRAIN SOURCE VOLTAGE
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
GATE
SOURCE
VOLTAGE
R
L
= 167
I
G(REF)
= 0.45mA
VGS = 10V
V
D
,
t, TIME (
μ
s)
RFM3N45, RFM3N50, RFP3N45, RFP3N50
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