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參數(shù)資料
| 型號： | RFM3N50 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 81K |
| 代理商： | RFM3N50 |
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
3.5
3
2.5
2
1.5
1
0.5
0
RFP3N45, RFP3N50
RFM3N45, RFM3N50
10
1
0.11
10
100
1000
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
100
I
D
,
I
D
(MAX.) CONTINUOUS
DCOPERATON
T
C
= 25
o
C
(CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
4
3
2
1
00
5
10
15
20
25
V
GS
= 10V
V
GS
= 6V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
V
GS
= 5V
V
GS
= 4V
0
2
4
6
8
10
0
1
2
3
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
V
DS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
TC = -40
o
C
TC = 25
o
C
TC = 125
o
C
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
I
D
, DRAIN CURRENT (A)
r
D
,
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE < 2%
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= -40
o
C
O
)
RFM3N45, RFM3N50, RFP3N45, RFP3N50
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