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參數(shù)資料
| 型號(hào)： | RFL4N12 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 4000 mA, 120 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | RFL4N12 |
5-3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.01
1
1
I
D
,
10
100
0.1
1000
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
RFL4N12
RFL4N15
15
20
10
5
0
0
1
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3
4
5
6
7
8
9
10
I
D
,
PULSE DURATION = 250
μ
s
T
C
= 25
o
C
V
GS
= 20V
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
0
2
4
6
8
10
20
15
10
5
0
V
GS
, GATE TO SOURCE (V)
I
D
,
V
DS
= 10V
PULSE DURATION = 250
μ
s
T
C
= 125
o
C
T
C
= -40
o
C
T
C
= -40
o
C
T
C
= 125
o
C
T
C
= 25
o
C
0
2
4
6
8
10
12
14
16
18
20
I
D
, DRAIN CURRENT (A)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
r
D
,
O
)
V
GS
= 10V
PULSE DURATION = 250
μ
s
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= -40
o
C
RFL4N12, RFL4N15
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