參數(shù)資料
型號(hào)： RFL4N12
廠商： HARRIS SEMICONDUCTOR
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs
中文描述： 4000 mA, 120 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 31K
代理商： RFL4N12
5-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFL4N12
RFL4N15
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 1M
)
(Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120
150
V
120
150
V
4
4
A
15
15
A
±
20
±
20
V
8.33
8.33
W
0.0667
0.0667
W/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
-55 to 150
-55 to 150
260
260
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
RFL4N12
120
-
-
V
RFL4N15
150
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 8)
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
-
-
1
μ
A
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 125
o
C
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0V
-
-
±
100
nA
Drain to Source On-Voltage (Note 2)
V
DS(ON)
I
D
= 4A, V
GS
= 10V
-
-
1.6
V
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 4A, V
GS
= 10V (Figures 6, 7)
-
-
0.400
Turn-On Delay Time
t
d(ON)
V
DD
= 75V, I
D
≈
2A, R
G
= 50
, V
GS
= 10V
(Figures 10, 11, 12)
-
40
60
ns
Rise Time
t
r
-
165
250
ns
Turn-Off Delay Time
t
d(OFF)
-
90
135
ns
Fall Time
t
f
-
90
135
ns
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 9)
-
-
850
pF
Output Capacitance
C
OSS
-
-
230
pF
Reverse-Transfer Capacitance
C
RSS
-
-
100
pF
Thermal Resistance Junction to Case
R
θ
JC
-
-
15
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 2A
1.4
V
Reverse Recovery Time
t
rr
I
SD
= 2A, dI
SD
/dt = 100A/
μ
s
200
-
ns
NOTE:
2. Pulse Test: pulse duration
≤
300
μ
s max, duty cycle
≤
2%.
RFL4N12, RFL4N15
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