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參數(shù)資料
| 型號(hào)： | RFL2N06L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFET(2A, 60V, 0.950 Ω, 邏輯電平N溝道功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 306K |
| 代理商： | RFL2N06L |
4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
-50
0
50
100
150
200
T
J
, JUNCTION TEMPERATURE (
o
C)
2
1.5
1
0.5
N
S
V
GS
= 5V, I
D
= 2A
0
-50
0
T
J
, JUNCTION TEMPERATURE (
o
C)
50
100
150
200
2
1.5
1
0.5
N
T
V
GS
= V
DS
, I
D
= 250
μ
A
0
10
20
30
40
50
300
400
0
100
200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
60
45
30
15
0
10
8
6
4
2
0
GATE SOURCE
VOLTAGE
R
L
= 4
I
G(REF)
= 0.5mA
V
GS
= 5V
DRAIN SOURCE VOLTAGE
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
V
D
,
V
G
,
I
G(REF)
I
G(ACT)
20
I
G(REF)
I
G(ACT)
80
t, TIME (
μ
s)
V
DD
= BV
DSS
V
DD
= BV
DSS
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFL2N06L
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