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參數(shù)資料
| 型號： | RFL2N06L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFET(2A, 60V, 0.950 Ω, 邏輯電平N溝道功率MOS場效應(yīng)管) |
| 中文描述： | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 306K |
| 代理商： | RFL2N06L |
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
T
C
, CASE TEMPERATURE (
o
C)
0
25
50
75
100
125
150
1.2
1.0
0.8
0.6
0.4
0.2
0
P
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
2.5
1.5
1.0
0.5
2.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.01
1
1
I
D
,
10
100
0.10
1000
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
T
J
= MAX RATED
T
C
= 25
C
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
T
C
= 25
C
V
GS
= 7.5V
V
GS
= 10V
V
GS
= 5V
4.5V
4V
3.5V
3V
2.5V
2V
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
C
= -40
o
C
T
C
= -40
o
C
3
T
C
= 125
o
C
5
4
3
2
1
01
2
4
5
6
8
7
6
V
DS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 25
o
C
T
C
= 125
o
C
I
D
, DRAIN CURRENT (A)
r
D
,
O
)
T
C
= 25
o
C
T
C
= -40
o
C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.6
0
2
4
6
8
10
V
GS
= 5V
PULSE DURATION = 80
μ
s
T
C
= 125
o
C
RFL2N06L
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