參數(shù)資料
型號: RFL1N10L
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET
中文描述: 100 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù): 4/5頁
文件大小: 29K
代理商: RFL1N10L
4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1.5
1
0.5
-50
0
50
100
150
T
J,
JUNCTION TEMPERATURE (
o
C)
V
GS
= 5V
I
D
= 1A
N
2
O
2.5
1.5
1
0.5
-50
0
50
100
150
T
J,
JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
V
GS
= V
DS
N
T
2
0
10
20
30
40
50
60
C
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
240
200
160
120
80
40
f = 1MHz
C
OSS
C
ISS
C
RSS
0.75V
DSS
0.75V
DSS
0.50V
DSS
0.50V
DSS
0.25V
DRAIN SOURCE VOLTAGE
0.25V
GATE
SOURCE
V
DD
= V
DSS
V
DD
= V
DSS
BV
DSS
I
G(REF)
I
G(ACT)
20
80
I
G(REF)
I
G(ACT)
R
L
= 50
I
G(REF)
= 0.094mA
V
GS
= 5V
V
D
,
t, TIME (
μ
s)
V
G
,
100
75
50
25
0
10
8
6
4
0
2
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFL1N10L
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