參數(shù)資料
型號： RFL1N10L
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET
中文描述： 100 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù)： 2/5頁
文件大?。?/td> 29K
代理商： RFL1N10L
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFL1N10L
100
100
1
5
±
10
8.33
0.0667
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 1M
)
(Note 1). . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Above T
C
= 25
o
C, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .T
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
260
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0
100
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
-
-
1
μ
A
V
DS
= 0.8 x Rated BV
DSS
, V
DS
= 80V,
T
C
= 125
o
C
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
10V, V
DS
= 0
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 1A, V
GS
= 5V (Figures 6, 7)
-
-
1.200
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= 1A, V
GS
= 5V
I
D
≈
1A, V
DD
= 50V, R
G
= 6.25
,
V
GS
= 5V, R
L
= 50
(Figures 10, 11, 12)
-
-
1.2
V
Turn-On Delay Time
t
d(ON)
-
10
25
ns
Rise Time
t
r
-
15
45
ns
Turn-Off Delay Time
t
d(OFF)
-
25
45
ns
Fall Time
t
f
-
30
50
ns
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1MHz
(Figure 9)
-
-
200
pF
Output Capacitance
C
OSS
-
-
80
pF
Reverse Transfer Capacitance
C
RSS
-
-
35
pF
Thermal Resistance Junction to Case
R
θ
JC
-
-
15
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 1A
-
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= 2A, dI
SD
/dt = 50A/
μ
s
-
100
-
ns
NOTES:
2. Pulse test: width
≤
300
μ
s duty cycle
≤
2%.
3. Repetitive rating: pulse witdh limited by maximum junction temperature.
RFL1N10L
相關(guān)PDF資料
PDF描述
RFL1N12L 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFL1N12 制造商:Rochester Electronics LLC 功能描述:- Bulk
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RFL1N15 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFL1N15L 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
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