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參數(shù)資料
| 型號： | RFL1N10L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET |
| 中文描述： | 100 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 29K |
| 代理商： | RFL1N10L |
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
P
1.2
0.8
0.4
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
0.6
0.2
1.0
10
1
0.1
0.011
10
100
1000
I
D
,
OPERATION IN THIS AREA
MAY BE LIMITED BY r
DS(ON)
V
DS
, DRAIN TO SOURCE (V)
T
C
= 25
o
C
3
2
1
0
3
4
5
6
7
8
10
I
D
D
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 2V
4
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 25
o
C
V
GS
= 5V
V
GS
= 10V
9
2
1
V
GS
= 4V
0
5
6
8
7
I
D
D
3
2
1
0
1
2
3
4
6
V
GS,
GATE TO SOURCE VOLTAGE (V)
4
5
-40
o
C
125
o
C
-40
o
C
25
o
C
125
o
C
6
5
V
DS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
125
o
C
25
o
C
-40
o
C
V
GS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
r
D
D
I
D,
DRAIN CURRENT (A)
2
1
0
0
1
2
3
4
5
R
)
6
0.5
1.5
7
RFL1N10L
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| RFL1N12L | 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFL1N12 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFL1N12L | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFL1N15 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFL1N15L | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFL1N18 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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