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參數(shù)資料
| 型號(hào)： | RFK70N06 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET |
| 中文描述： | 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 86K |
| 代理商： | RFK70N06 |
4
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0.01
0.1
100
300
10
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
If R = 0
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
1
10
0
40
80
120
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
160
200
I
D
,
PULSE DURATION = 250
μ
s
T
C
= 25
C
V
GS
= 10V
V
GS
= 20V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4.5V
0
4
6
8
10
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
40
80
120
160
200
I
D
,
V
DD
= 15V
25
o
C
175
o
C
-55
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
10
20
30
40
50
0
6
7
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
4
8
9
10
O
)
PULSE DURATION = 250
μ
s, V
DD
= 15V
I
D
= 17.5A
I
D
= 35A
I
D
= 70A
I
D
= 140A
T
C
= 25
o
C
0
0.5
1
1.5
2.5
-40
0
40
80
120
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
2
160
250
μ
s PULSE TEST
V
GS
= 10V, I
D
= 70A
-80
-40
0
40
80
120
200
0
0.5
1
1.5
2
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
160
V
GS
= V
DS
, I
D
= 250
μ
A
RFK70N06
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