參數(shù)資料
型號(hào)： RFK70N06
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET
中文描述： 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 86K
代理商： RFK70N06
2
Absolute Maximum Ratings
T
C
= 25
o
C Unless Otherwise Specified
RFK70N06
60
60
70
UNITS
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Refer to Peak Current Curve
±
20
Refer to UIS Curve
150
1.0
-55 to 175
V
W
W/
o
C
o
C
260
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
μ
A
60
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
20V
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 70A, V
GS
= 10V (Figure 10)
V
DD
= 30V, I
D
≈
70A, R
L
= 0.43
,
V
GS
= 10V, R
G
= 2.5
(Figures 14, 17, 18)
-
-
0.014
Turn-On Time
t
ON
-
-
125
ns
Turn-On Delay Time
t
d(ON)
-
12
-
ns
Rise Time
t
r
-
50
-
ns
Turn-Off Delay Time
t
d(OFF)
-
40
-
ns
Fall Time
t
f
-
15
-
ns
Turn-Off Time
t
OFF
-
-
125
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 48V, I
D
≈
70A,
R
L
= 0.68
,
I
G(REF)
= 1.0mA
(Figures 19, 20)
-
185
215
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
100
115
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
5.5
6.5
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 13)
-
3000
-
pF
Output Capacitance
C
OSS
-
900
-
pF
Reverse Transfer Capacitance
C
RSS
-
300
-
pF
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
-
-
1.0
o
C/W
Thermal Resistance Junction to Ambient
-
-
80
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 70A
I
SD
= 70A, dI
SD
/dt = 100A/
μ
s
-
-
1.5
V
Reverse Recovery Time
t
rr
-
-
125
ns
NOTES:
2. Pulse test: pulse width
≤
300ms, duty cycle
≤
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature. See Transient Thermal Temperature curve (Figure 3).
RFK70N06
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