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參數(shù)資料
| 型號(hào)： | RFK70N06 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET |
| 中文描述： | 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 86K |
| 代理商： | RFK70N06 |
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
30
10
0
25
50
75
100
125
175
20
40
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
80
50
60
70
150
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-1
10
0
0.01
2
0.1
1
10
-2
10
1
Z
θ
J
,
T
10
-4
10
-3
SINGLE PULSE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
1
10
500
100
1
I
D
,
T
J
= MAX RATED
T
C
= 25
o
C
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
μ
s
1ms
10ms
100ms
DC
t, PULSE WIDTH (s)
1000
100
50
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
I
D
,
I
=
I
25
150 - T
C
125
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
T
C
= 25
o
C
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
RFK70N06
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