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參數(shù)資料
| 型號(hào)： | RFH25P08 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 25 A, 80 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-218AC |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | RFH25P08 |
6-4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
N
3
2
1
0
-50
0
50
T
J
, JUNCTION TEMPERATURE (
o
C)
150
4
100
I
D
= 25A
V
GS
= -10V
O
N
0.6
0.4
0.2
0-50
0
50
T
J
, JUNCTION TEMPERATURE (
o
C)
150
0.8
100
I
D
= 250
μ
A
V
GS
= V
DS
1.6
1.4
1.2
1.0
1000
00
-20
-50
C
3000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4000
2000
-30
-40
-10
C
ISS
C
OSS
C
RSS
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
10
8
6
4
2
0
100
75
50
25
0
V
D
,
V
G
,
GATE
SOURCE
VOLTAGE
DRAIN SOURCE VOLTAGE
I
G(REF)
I
G(ACT)
20
I
G(REF)
I
G(ACT)
80
t, TIME (
μ
s)
BV
DSS
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 4
I
G(REF)
= 1.5mA
V
GS
= -10V
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
V
GS
R
L
R
G
DUT
+
-
V
DD
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
t
ON
10%
0
RFH25P08, RFH25P10, RFK25P08, RFK25P10
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| RFH25P10 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs |
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