參數(shù)資料
型號： RFH25P08
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs
中文描述： 25 A, 80 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-218AC
文件頁數(shù)： 2/4頁
文件大?。?/td> 33K
代理商： RFH25P08
6-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFH25P08
RFK25P08
-80
-80
-25
-60
±
20
150
1.2
-55 to 150
RFH25P10
RFK25P10
-100
-100
-25
-60
±
20
150
1.2
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 (for TO-218AC). . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFH25P08, RFK25P08
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
-80
-
-
V
RFH25P10, RFK25P10
-100
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A, (Figure 8)
-2
-
-4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0
-
-
-1
μ
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0,
T
C
= 125
o
C
-
-
-25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 25A, V
GS
= -10V, (Figures 6, 7)
-
-
0.150
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= -25A, V
GS
= -10V
-
-
-3.75
V
Turn-On Delay Time
t
d(ON)
I
D
≈
12.5A, V
DS
= -50V, R
GS
= 50
,
V
GS
= -10V, R
L
= 4.0
(Figures 10, 11, 12)
-
35
50
ns
Rise Time
t
r
-
165
250
ns
Turn-Off Delay Time
t
d(OFF)
-
270
400
ns
Fall Time
t
f
-
165
250
ns
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= -25V, f = 1MHz
(Figure 9)
-
-
3000
pF
Output Capacitance
C
OSS
-
-
1500
pF
Reverse-Transfer Capacitance
C
RSS
-
-
600
pF
Thermal Resistance Junction to Case
R
θ
JC
RFK25P08, RFK25P10
-
-
0.83
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= -12.5A
-
-
-1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= -4A, dI
SD
/dt = 100A/
μ
s
-
300
-
ns
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFH25P08, RFH25P10, RFK25P08, RFK25P10
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