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參數(shù)資料
| 型號： | RFH25P08 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 25 A, 80 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-218AC |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | RFH25P08 |
6-3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs
DRAIN CURRENT
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
30
25
20
15
10
5
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
-100
1
-10
-1
0.1
-1000
10
100
LIMITED BY r
DS(ON)
THIS AREA MAY BE
OPERATION IN
T
C
= 25
o
C, T
J
= MAX RATED
I
D
MAX
CONTINUOUS
DC OPERATION
V
DSS
(MAX) = -80V
RFH25P08, RFK25P08
V
DSS
(MAX) = -100V
RFH25P10, RFK25P10
0
20
0
-2
-4
-6
40
60
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
80
-8
100
V
GS
= -20V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 25
C
V
GS
= -10V
V
GS
= -7V
V
GS
= -8V
V
GS
= -4V
V
GS
= -6V
V
GS
= -5V
0
-4
-6
-8
-10
-2
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
30
40
I
D
,
20
10
125
o
C
25
o
C
-40
o
C
V
DS
= -10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= -40
o
C
125
o
C
0
0.16
10
20
30
40
r
D
,
I
D
, DRAIN CURRENT (A)
50
0.20
0
0.04
0.08
0.12
T
C
= 125
o
C
V
GS
= -10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 25
o
C
T
C
= -40
o
C
O
)
RFH25P08, RFH25P10, RFK25P08, RFK25P10
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