參數(shù)資料
型號(hào)： RFG60P03
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs(60A, 30V, 0.027 Ω,P溝道功率MOS場(chǎng)效應(yīng)管)
中文描述： 60 A, 30 V, 0.027 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù)： 2/7頁
文件大?。?/td> 88K
代理商： RFG60P03
4-141
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG60P03, RFP60P03, RFS60P03SM
-30
-30
±
20
60
Refer to Peak Current Curve
Figure 6
176
1.17
-55 to 175
UNITS
V
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage, (R
gs
= 20k
) (
Note 1
)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
W
W/
o
C
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 150
o
C
V
GS
=
±
20V
I
D
= 60A, V
GS
= 10V
V
DD
= 15V, I
D
≈
60A, R
L
= 0.25
,
V
GS
= -10V, R
G
= 2.5
,
(Figure 13)
-30
-
-
V
Gate Threshold Voltage
-2
-
-4
V
Zero Gate Voltage Drain Current
-
-
-1
μ
A
μ
A
-
-
-50
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(-10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
-
0.027
Turn-On Time
-
-
140
ns
Turn-On Delay Time
-
20
-
ns
Rise Time
-
75
-
ns
Turn-Off Delay Time
-
35
-
ns
Fall Time
-
40
-
ns
Turn-Off Time
-
-
115
ns
Total Gate Charge
V
GS
= 0 to -20V
V
GS
= 0 to -10V
V
GS
= 0 to -2V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 12)
V
DD
= -24V, I
D
≈
60A,
R
L
= 0.4
I
g(REF)
= -3mA
-
190
230
nC
Gate Charge at 10V
-
100
120
nC
Threshold Gate Charge
-
7.5
9
nC
Input Capacitance
-
3000
-
pF
Output Capacitance
-
1500
-
pF
Reverse Transfer Capacitance
-
525
-
pF
Thermal Resistance, Junction to Case
(Figure 3)
-
-
0.85
o
C/W
o
C/W
o
C/W
Thermal Resistance, Junction to Ambient
TO-220AB, TO- 263AB
-
-
62
TO-247
-
-
30
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= -60A
-
-
-1.75
V
Diode Reverse Recovery Time
t
rr
I
SD
= -60A, dI
SD
/dt = 100A/
μ
s
-
-
200
ns
NOTE:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3)
RFG60P03, RFP60P03, RF1S60P03SM
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PDF描述
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