參數(shù)資料
型號： RFG60P03
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs(60A, 30V, 0.027 Ω,P溝道功率MOS場效應(yīng)管)
中文描述： 60 A, 30 V, 0.027 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù)： 3/7頁
文件大小： 88K
代理商： RFG60P03
4-142
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
P
T
C
, CASE TEMPERATURE (
o
C)
-50
-40
-30
-20
-10
0
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-60
-70
P
DM
t
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
t
2
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
T
-500
-100
-10
-1
-1
-10
-60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1ms
100
μ
s
10ms
100ms
DC
I
D
,
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-10
2
-10
3
t, PULSE WIDTH (ms)
I
D
,
V
GS
= -20V
V
GS
= -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I25
175
-------150
–
=
-50
T
C
= 25
o
C
RFG60P03, RFP60P03, RF1S60P03SM
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RF1S640 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
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