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參數(shù)資料
| 型號(hào)： | RFG60P03 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs(60A, 30V, 0.027 Ω,P溝道功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 60 A, 30 V, 0.027 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁(yè)數(shù)： | 7/7頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | RFG60P03 |
4-146
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
PSPICE Electrical Model
.SUBCKT RFP60P03 2 1 3 REV 6/21/94
CA 12 8 5.01e-9
CB 15 14 3.9e-9
CIN 6 8 3.09e-9
DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -36.59
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 4.92e-9
LSOURCE 3 7 2.36e-9
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 1e-4
RGATE 9 20 3.25
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 11.28e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.92
.MODEL DBDMOD D (IS=4.21e-13 RS=1e-2 TRS1=-2.69e-4 TRS2=-1.33e-6 CJO=5.05e-9 TT=5.33e-8)
.MODEL DBKMOD D (RS=3.80e-2 TRS1=-4.76e-4 TRS2=-4.17e-12)
.MODEL DPLCAPMOD D (CJO=4.05e-9 IS=1e-30 N=10)
.MODEL MOSMOD PMOS (VTO=-3.98 KP=16.27 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=8.05e-4 TC2=1.48e-6)
.MODEL RDSMOD RES (TC1=2.80e-3 TC2=2.62e-6)
.MODEL RVTOMOD RES (TC1=-3.34e-3 TC2=1.46e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=7.5 VOFF=4.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.5 VOFF=7.5)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.43 VOFF=-3.57)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.57 VOFF=1.43)
.ENDS
NOTE: For further discussion of the PSPICE model consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; authors, William J. Hepp and C. Frank Wheatley.
EVTO
+
18
13
CA
CB
EGS
EDS
RIN
CIN
MOS1
MOS2
DBREAK
EBREAK
DBODY
LDRAIN
DRAIN
2
RSOURCE
LSOURCE
SOURCE
RBREAK
RVTO
19
VBAT
IT
VTO
DPLCAP
10
5
16
21
8
14
7
3
17
18
+
+
+
RDRAIN
S1A
S2A
S2B
S1B
12
15
13
8
14
13
6
8
+
-
5
8
-
-
8
RGATE
GATE
LGATE
20
9
1
ESG
+
-
6
8
11
+
-
17
18
6
RFG60P03, RFP60P03, RF1S60P03SM
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| RF1S640SM | 18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| RF1S640 | 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs |
| RF1S640SM | 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs |
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