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參數(shù)資料
| 型號： | RFD8P06ESM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 87K |
| 代理商： | RFD8P06ESM |
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RFD8P06E, RFD8P06ESM, RFP8P06E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFD8P06LE | 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET |
| RFD8P06LESM | 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET |
| RFD8P06 | 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
| RFP8P06LE | 8A, 60V, 0.300 Ohm, ESD Rated, P-Channel Power MOSFET(8A, 60V, 0.300Ω，額定靜電釋放P溝道功率MOS場效應(yīng)管) |
| RFP8P10 | 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET(8A, 100V, 0.400 Ω,P溝道增強(qiáng)模式功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD8P06ESM9A | 功能描述:MOSFET -60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD8P06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD8P06LESM | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET |
| RFD8P06LESM9A | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD90101 | 功能描述:RFDUINO TEASER KIT 制造商:rf digital corporation 系列:RFduino 零件狀態(tài):有效 類型:收發(fā)器; 智能低功耗（BLE）藍(lán)牙? 4.x 頻率:2.4GHz 配套使用產(chǎn)品/相關(guān)產(chǎn)品:RFD22102 所含物品:2 個板 標(biāo)準(zhǔn)包裝:1 |
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