參數(shù)資料
型號： RFD8P06ESM
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs
中文描述： 8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù)： 3/8頁
文件大?。?/td> 87K
代理商： RFD8P06ESM
4-119
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
P
T
C
, CASE TEMPERATURE (
o
C)
-4
-8
-2
0
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-6
-10
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.01
0.02
0.05
0.1
0.2
0.5
SINGLE PULSE
-100
-10
-1
-0.1
-1
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100
μ
s
10ms
100ms
DC
1ms
T
C
= 25
o
C, T
J
= MAX RATED
V
GS
= -20V
V
GS
= -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
-5
I
I25
175
---------------------
–
=
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-10
-10
2
t, PULSE WIDTH (s)
I
D
,
T
C
= 25
o
C
RFD8P06E, RFD8P06ESM, RFP8P06E
相關(guān)PDF資料
PDF描述
RFD8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
RFD8P06LESM 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
RFD8P06 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs
RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, P-Channel Power MOSFET(8A, 60V, 0.300Ω，額定靜電釋放P溝道功率MOS場效應(yīng)管)
RFP8P10 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET(8A, 100V, 0.400 Ω,P溝道增強模式功率MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD8P06ESM9A 功能描述:MOSFET -60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD8P06LE 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD8P06LESM 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
RFD8P06LESM9A 制造商:Fairchild Semiconductor Corporation 功能描述:
RFD90101 功能描述:RFDUINO TEASER KIT 制造商:rf digital corporation 系列:RFduino 零件狀態(tài):有效 類型:收發(fā)器; 智能低功耗（BLE）藍牙? 4.x 頻率:2.4GHz 配套使用產(chǎn)品/相關(guān)產(chǎn)品:RFD22102 所含物品:2 個板 標準包裝:1
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