參數(shù)資料
型號(hào)： RFD8P06E
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs
中文描述： 8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁(yè)數(shù)： 5/8頁(yè)
文件大小： 87K
代理商： RFD8P06E
4-121
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE:
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Refer to Intersil Application Notes AN7254 and AN7260.
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
800
600
400
200
0
0
-5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-10
-15
-20
-25
C
1000
C
ISS
C
RSS
C
OSS
V
GS
= 0V, f = 1MHz
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
-60
-45
-30
-15
0
-10.0
-7.5
-5.0
-2.5
0.0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
t, TIME (
μ
s)
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 1.2
I
G(REF)
= 1.45mA
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
D
,
V
G
,
V
GS
= -10V
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
DUT
t
P
-V
GS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
R
GS
R
L
DUT
-V
GS
0V
+
-
V
GS
V
DS
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
10%
0
0
RFD8P06E, RFD8P06ESM, RFP8P06E
相關(guān)PDF資料
PDF描述
RFD8P06ESM 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs
RFD8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
RFD8P06LESM 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
RFD8P06 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs
RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, P-Channel Power MOSFET(8A, 60V, 0.300Ω，額定靜電釋放P溝道功率MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD8P06E_02 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs
RFD8P06ESM 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD8P06ESM9A 功能描述:MOSFET -60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD8P06LE 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD8P06LESM 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
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