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參數(shù)資料
| 型號： | RFD8P06E |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 87K |
| 代理商： | RFD8P06E |
4-120
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-30
-10
-1
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
If R = 0
t
AV
= (L) (I
AS
) / (1.3RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
0
0
-1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-3.0
-4.5
-6.0
-7.5
I
D
,
V
GS
= -5V
V
GS
= -6V
V
GS
= -8V
V
GS
= -7V
V
GS
= -10V
-5
-10
-15
-20
V
GS
= -4.5V
V
GS
= -20V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
0
-2
-4
-6
-8
-10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
0
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
-55
o
C
V
DD
= -15V
175
o
C
25
o
C
-5
-10
-20
-15
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
2.5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -10V, I
D
= 8A
O
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
160
120
200
T
T
J
, JUNCTION TEMPERATURE (
o
C)
N
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0-80
-40
0
40
80
120
160
200
N
B
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
RFD8P06E, RFD8P06ESM, RFP8P06E
相關PDF資料 |
PDF描述 |
|---|---|
| RFD8P06ESM | 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
| RFD8P06LE | 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET |
| RFD8P06LESM | 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET |
| RFD8P06 | 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
| RFP8P06LE | 8A, 60V, 0.300 Ohm, ESD Rated, P-Channel Power MOSFET(8A, 60V, 0.300Ω，額定靜電釋放P溝道功率MOS場效應管) |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD8P06E_02 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
| RFD8P06ESM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD8P06ESM9A | 功能描述:MOSFET -60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD8P06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD8P06LESM | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET |
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