參數(shù)資料
型號： RFD8P06E
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs
中文描述： 8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù)： 2/8頁
文件大小： 87K
代理商： RFD8P06E
4-118
Absolute Maximum Ratings
T
C
= 25
o
C
RFD8P06E, RFD8P06ESM, RFP8P06E
-60
-60
±
20
8
Refer to Peak Current Curve
Refer to UIS Curve
48
0.32
2
-55 to 175
UNITS
V
V
V
A
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20K
) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . .ESD
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
W
W/
o
C
kV
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 150
o
C
V
GS
=
±
20V
I
D
= 8A, V
GS
= -10V
V
DD
= -30V, I
D
≈
8A,
R
L
= 3.75
, V
GS
= -10V, R
G
= 2.5
(Figure 13)
-60
-
-
V
Gate Threshold Voltage
-2.0
-
-4.0
V
Zero Gate Voltage Drain Current
-
-
-1.0
μ
A
μ
A
μ
A
-
-
-25
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(-10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
-
-
±
10
Drain to Source On Resistance (Note 3)
-
-
0.300
Turn-On Time
-
-
70
ns
Turn-On Delay Time
-
15
-
ns
Rise Time
-
30
-
ns
Turn-Off Delay Time
-
40
-
ns
Fall Time
-
25
-
ns
Turn-Off Time
-
-
100
ns
Total Gate Charge
V
GS
= 0 to -20V
V
GS
= 0 to -10V
V
GS
= 0 to -2V
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
V
DD
= -48V, I
D
= 8A,
R
L
= 6
I
g(REF)
= -1.45mA
-
30
36
nC
Gate Charge at 5V
-
15
18
nC
Threshold Gate Charge
-
1.15
1.5
nC
Input Capacitance
-
600
-
pF
Output Capacitance
-
160
-
pF
Reverse Transfer Capacitance
-
35
-
pF
Thermal Resistance Junction to Case
Figure 12
-
-
3.125
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
TO-220
-
-
62
TO-251, TO-252
-
-
100
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
t
rr
I
SD
= -8A
I
SD
= -8A, dI
SD
/dt = -100A/
μ
s
-
-
-1.5
V
Diode Reverse Recovery Time
-
-
125
ns
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
RFD8P06E, RFD8P06ESM, RFP8P06E
相關(guān)PDF資料
PDF描述
RFD8P06ESM 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs
RFD8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
RFD8P06LESM 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
RFD8P06 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs
RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, P-Channel Power MOSFET(8A, 60V, 0.300Ω，額定靜電釋放P溝道功率MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD8P06E_02 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs
RFD8P06ESM 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD8P06ESM9A 功能描述:MOSFET -60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD8P06LE 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD8P06LESM 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*