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參數(shù)資料
| 型號： | RFD7N10LESM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs |
| 中文描述： | 7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 361K |
| 代理商： | RFD7N10LESM |
4
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
t
AV
, TIME IN AVALANCHE (ms)
0.001
0.01
0.1
1
1
10
14
20
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
I
A
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
0
5
10
15
0
1.5
3.0
4.5
6.0
7.5
V
GS
= 3V
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 10V
V
GS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
3
4
5
6
7
1
0
5
10
15
I
D
,
-55
o
C
2
175
o
C
V
DD
= 15V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
J
, JUNCTION TEMPERATURE (
o
C)
N
0
-80
0.5
1.0
1.5
2.0
2.5
3.0
-40
0
40
80
120
160
200
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V, I
D
= 7A
T
J
, JUNCTION TEMPERATURE (
o
C)
-80
-40
0
40
80
120
200
160
0
0.5
1.0
1.5
2.0
N
V
GS
= V
DS
, I
D
= 250
μ
A
T
2.0
1.5
1.0
0.5
0-80
-40
0
40
80
120
160
200
N
B
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
RFD7N10LE, RFD7N10LESM
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